On December 24, 2025, Hanking, an enterprise based in Xiamen Torch Hi-tech Industrial Development Zone, successfully developed the world’s first 12-inch high-quality silicon carbide epitaxial wafers.
Product Advantages: Compared with the current mainstream 6-inch silicon carbide epitaxial wafers and the 8-inch wafers still in the industrialization stage, the 12-inch wafers, with their significantly increased diameter, can accommodate a much larger number of chips per wafer in the same production process—4.4 times that of 6-inch wafers and 2.3 times that of 8-inch wafers. This will substantially improve the production efficiency of downstream power devices and drastically reduce the unit manufacturing cost of silicon carbide chips.
Key Performance Metrics: The product achieves an epitaxial layer thickness uniformity of within 3%, a doping concentration uniformity of ≤8%, and a yield rate of over 96% for 2mm×2mm chips, fully meeting the high-reliability application requirements of downstream power devices.
R&D Background: Hanking is the first Chinese enterprise to realize the commercial mass supply of 3-inch, 4-inch and 6-inch silicon carbide epitaxial wafers. In May 2023, it became the first manufacturer in Greater China to break through the 8-inch silicon carbide epitaxial wafer technology, and in 2024, it emerged as the only enterprise worldwide to achieve mass sales of 8-inch silicon carbide epitaxial wafers. According to a research report by Frost & Sullivan, the company already ranked as the world’s largest supplier of silicon carbide epitaxial wafers in 2023, with a global market share exceeding 31% in 2024.
Significance: The successful R&D of the 12-inch silicon carbide epitaxial wafers not only demonstrates China’s technological leadership in this field, but also provides a strong material foundation for building an independent and controllable third-generation semiconductor industry ecosystem and seizing the commanding heights of future industrial competition.
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